Raytheon

The Microelectronics Engineering and Technology (MET) department is seeking candidates for a position as a Senior Principal Electrical Engineer with experience with semiconductor device reliability to be part of a team to develop next generation microwave and millimeter wave GaN and GaAs semiconductor devices and circuits. The MET department designs and manufactures compound semiconductor devices, millimeter/microwave integrated circuits (MMICs) and modules for defense and commercial applications and is a part of Raytheon Missiles and Defense.

In this role, the successful candidate will employ the following skills:

Knowledge: Subject matter expert in the area of device reliability; have the ingenuity and resourcefulness to be able to develop advanced technologies and concepts.

Discretion: Act independently and lead team to uncover and resolve issues.

Vision: Develop MET’s strategic semiconductor reliability roadmaps, innovative measurements and systems, and new characterization techniques.

Impact: Provide the innovation and maturation of new technologies and concepts resulting in new product/business opportunities for Raytheon.

Liaison: Report to program management and key spokesperson on reliably issues.

Required Skills:

• 10+ years of experience with rf and dc reliability
• Experience with reliability measurements and/or stress testing on GaN and GaAs devices
• Experience with Arrhenius, FIT, or MTTF data analysis
• Experience with Failure Mode Effect Analysis (FMEA) techniques
• Ability to obtain Secret security clearance

Desired Skills:

• PhD in electrical engineering or related engineering/science degree with focus on device physics
• Ability to perform and advance device, circuit, and module reliability measurements
• Ability to interact and support teams of device and circuit designers, device modeling engineers, failure analysis experts and test engineers
• Experience with identifying and understanding device failure mechanisms
• Understand different types of die attach and carriers and their effects on device reliability
• Experience with various failure analysis techniques including but not limited to electrical tests, visual inspections, Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), Focused Ion Beam (FIB)
• Strong statistical and data analysis background
• Experience with on-wafer reliability testing techniques and device characterization

Required Education:

MS in electrical engineering or related engineering/science degree with focus on device physics

This position requires either a U.S. Person or a Non-U.S. Person who is eligible to obtain any required Export Authorization. 162148

Raytheon is an Equal Opportunity/Affirmative Action employer. All qualified applicants will receive consideration for employment without regard to race, age, color, religion, creed, sex, sexual orientation, gender identity, national origin, disability, or protected Veteran status.